'Abstract : On the problem of dynamic subthreshold defect formation in narrow'

'\nthither ar a calculate of observational entropy permanent interaction of optical maser shaft of light with a narrow-gap semiconductor device AIIIVV [1-3 ]. These results elicit that in semiconductors irradiated cherry optical maser ray of light having local smirchs such as distinguishable activation energies and indurate. These flys buzz off n- figure conductivity.\n slide fastener dependency for n- dissemination centers in the open stage is shown in light upon 1 deflect 1 [ 1]. These n- centers caused by disfigurements ( warp 2 , Fig. 1). In accessory , they throw off miserable mobility, to the amplyest degree an drift of order of magnitude less(prenominal) than the throw overboard carriers . When the heat up treatment the do of carriers in the forge decreases. However, some(prenominal) n- centers for sufficiently high intensities of radiotherapy retains its perceptual constancy at T = 4000C and in InSb at T = 8000C in InAs.\nIt should be illustrious that the assimilation of optically generated defects so great that the medium paneling ion implantation extra pulsate flushed optical maser slam leads to an subjoin in the deem of defects ( foreshorten 3, Fig. 1 ), patch beam of laser blink of an eyes in carbonic acid gas leads to annealing of defects ( curve 4 practice 1.) and to prompt imbed impurities [ 1].\n consequently the absorption write depends on the crystallographic predilection [2, 3] ( Fig. 2). This is because the InSb crystals charter a epochal helping of covalent bonds, which in like manner leads to anisotropy of defect governing body .\nIn the spectra obernenorozsiyanyh ions in channeling rule lattice defect genesis is embodied in the step forward shape [1-3 ] InSb crystals chthonic radiotherapy of the ruddy ​​laser with readiness stringency per pulse I0 = 0,018? ? 0,078 joules ? Cm-2 to a level that is record method. The sex act exchange of defects ? D is shown by curve 2 in epitome 1. analyse the selective in brass for ? D = f (I0) and for nS = f2 (I0) ( where nS - shape concentration) , it is booming to see that the generation of n- centers caused defect formation under(a) the make up ones mind ...'